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MERCURY PRESSURE OVER HGTE AND HGCDTE IN A CLOSED ISOTHERMAL SYSTEMBAILLY F; SVOB L; COHEN SOLAL G et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4244-4250; BIBL. 8 REF.Article

SPUTTERING OF CDXHG1-XTE FILMS IN MERCURY VAPOUR PLASMAZOZIME A; SELLA C; COHEN SOLAL G et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 373-378; BIBL. 2 REF.Serial Issue

SPUTTERING OF CDXHG1-XTE FILMS IN MERCURY VAPOUR PLASMAZOZIME A; SELLA C; COHEN SOLAL G et al.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 2; PP. 373-378; BIBL. 2 REF.Serial Issue

CONDUCTIVITE PAR LES ETATS ACCEPTEURS DANS HG1-XMNXTE EN CHAMPS MAGNETIQUES FORTSPONIKAROV BB; TSIDIL'KOVSKIJ IM; SHELUSHININA NG et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 2; PP. 296-303; BIBL. 10 REF.Article

ACCEPTOR STATES IN ZERO-GAP SEMICONDUCTORS IN MAGNETIC FIELD. THEORY FOR SHORT-RANGE DEFECT POTENTIALGORTEL ZW; SZYMANSKI J; SWIERKOWSKI L et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 429-439; ABS. GER; BIBL. 28 REF.Article

ETUDE DES PHENOMENES DE TRANSPORT SOUS CONTRAINTE HYDROSTATIQUE DANS HGTE ET LEURS COMPOSES AVEC CD:HG1-XCDXTE BRUTS ET RECUITSDAME JEAN FRANCOIS.1980; ; FRA; DA. 1980; 204 P.: ILL.; 30 CM; BIBL. 28 REF.; TH. 3E CYCLE: PHYS. SOL., APPL. ELECTRON./MONTPELLIER 2/1980Thesis

COMMON ANION HETEROJUNCTIONS: CDTE-CDHGTEMIGLIORATO P; WHITE AM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 65-69; BIBL. 17 REF.Article

OXIDATION OF HG1-XCDXTE STUDIED WITH SURFACE SENSITIVE TECHNIQUESMORGEN P; SILBERMAN JA; LINDAU I et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 597-610; BIBL. 20 REF.Article

FIELD INDUCED TUNNELING IN HG1-XCDXTE PHOTODIODESANDERSON WW.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1080-1082; BIBL. 13 REF.Article

DETERMINATION DE LA COMPOSITION DES TELLURURES DE CERTAINS METAUXGEJNRIKHS K YA; OSIPOVA GV; CHERKASOVA NM et al.1976; TRUDY INST. KHIM. NAUK, ALMA-ATA; S.S.S.R.; DA. 1976; VOL. 42; PP. 88-98; BIBL. 12 REF.Article

ULTIMATE IR HORIZON SENSORJAIN YK; ALEX TK; KALAKRISHNAN B et al.1980; I.E.E.E. TRANS. AEROSPACE ELECTRON. SYST.; USA; DA. 1980; VOL. 16; NO 2; PP. 233-237; BIBL. 7 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES ET DE RECOMBINAISON D'UN PHOTOMELANGEUR A BASE DE CDHGTELILENKO YU V.1980; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1980; VOL. 23; NO 7; PP. 100-103; BIBL. 7 REF.Article

ELECTRONIC STRUCTURE OF HG1-XCDXTEHASS KC.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1088-1100; BIBL. 63 REF.Article

ACCEPTOR STATES IN ZERO-GAP SEMICONDUCTORS IN MAGNETIC FIELD: THEORY FOR SHORT-RANGE DEFECT POTENTIALGORTEL ZW; SZYMANSKI J; SWIERKOWSKI L et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. 429-439; ABS. GER; BIBL. 28 REF.Article

RESONANT STATES AND THEIR INFLUENCE ON OPTICAL PROPERTIES OF HG1-XCDXTE TYPE CRYSTALSTRZECIAKOWSKI W.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 6; PP. 1199-1217; BIBL. 14 REF.Article

(MAGNETOOPTICAL STUDY OF ALLOYS HG1-XFEXTE AND HG1-XFEXSE, OF LOW IRON CONTENT)FERSERRE HELENE.1981; ; FRA; DA. 1981; 68 P.-PL.; 30 CM; BIBL. 28 REF.; TH. 3E CYCLE: PHYS./PARIS 6/1981Thesis

ADVANTAGES OF THE HGTE-CDTE SUPERLATTICE AS AN INFRARED DETECTOR MATERIALSMITH DL; MCGILL TC; SCHULMAN JN et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 180-182; BIBL. 16 REF.Article

VAPOR PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERSVOHL P; WOLFE CM.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 5; PP. 659-678; BIBL. 18 REF.Article

ENERGY GAP-REFRACTIVE INDEX INTERRELATIONVISHNU GOPAL.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 5; PP. 255-257; BIBL. 14 REF.Article

THEORY OF ELECTRIC BREAKDOWN IN SOLIDS WITH GENERAL TWO-BAND CROSSINGSMCMURRAY RE JR; FALICOV LM.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 8; PP. 4047-4051; BIBL. 9 REF.Article

ETUDE DES INTERACTIONS D'ECHANGE DANS LES ALLIAGES HG1-KMNKTEBASTARD GERALD; RIGAUX CLAUDETTE.1980; ; FRA; DA. 1980; DGRST/78 7 0316; 18 P.; 30 CM; BIBL. 14 REF.; ACTION CONCERTEE: PHYSIQUE ELECTRONIQUEReport

Chemoabrasive polishing of MCT wafersGOLDSTEIN, M; HOROWITZ, A; MAKOVSKY, J et al.Metallography. 1983, Vol 16, Num 3, pp 321-326, issn 0026-0800Article

MACLAGE DANS LES CRISTAUX DE CDTE ET CDXHG1-XTEKURILO IV; KUCHMA VI.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 4; PP. 569-572; BIBL. 3 REF.Article

INTERDIFFUSION IN DOPED SEMICONDUCTOR ALLOYS HGWCD1-WTELEUTE V; SCHMIDTKE HM; STRATMANN W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 183-192; ABS. GER; BIBL. 23 REF.Article

THEORY OF SURFACE POLARITONS IN A POLAR ZERO-GAY SEMICONDUCTORMARTIN BG; BROERMAN JG.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 4; PP. 2018-2024; BIBL. 17 REF.Article

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